1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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Infineon Technologies | MOSFET N-CH 650V 4.5A TO-251 | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1 | N-Channel | - | 650V | 4.5A (Tc) | 950 mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | 328pF @ 100V | 10V | ±20V | 37W (Tc) |
