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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 75A TO251-3 TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 100V 75A (Tc) 11.8 mOhm @ 75A, 10V 4V @ 83µA 65nC @ 10V 4320pF @ 50V 10V ±20V 125W (Tc)
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Infineon Technologies MOSFET N-CH 120V 75A TO251-3 TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 120V 75A (Tc) 11 mOhm @ 75A, 10V 4V @ 83µA 65nC @ 10V 4310pF @ 60V 10V ±20V 136W (Tc)
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Infineon Technologies MOSFET N-CH 550V 7.1A TO-251 TO-251-3 Stub Leads, IPak CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 550V 7.1A (Tc) 520 mOhm @ 3.8A, 10V 3.5V @ 250µA 17nC @ 10V 680pF @ 100V 10V ±20V 66W (Tc)
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Per Unit
$1.290
RFQ
150
In-stock
Infineon Technologies MOSFET N-CH 650V 4.5A TO-251 TO-251-3 Stub Leads, IPak CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO251-3 0 1 N-Channel - 650V 4.5A (Tc) 950 mOhm @ 1.5A, 10V 3.5V @ 200µA 15.3nC @ 10V 328pF @ 100V 10V ±20V 37W (Tc)
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