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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 90A TO251-3 TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 30V 90A (Tc) 3.1 mOhm @ 30A, 10V 2.2V @ 250µA 51nC @ 10V 5300pF @ 15V 4.5V, 10V ±20V 94W (Tc)
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Infineon Technologies MOSFET N-CH 25V 90A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 25V 90A (Tc) 4.4 mOhm @ 60A, 10V 2V @ 40µA 26nC @ 5V 3200pF @ 15V 4.5V, 10V ±20V 94W (Tc)
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Infineon Technologies MOSFET N-CH 30V 90A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 30V 90A (Tc) 5 mOhm @ 60A, 10V 2V @ 40µA 25nC @ 5V 3200pF @ 15V 4.5V, 10V ±20V 94W (Tc)
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Infineon Technologies MOSFET N-CH 25V 50A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 25V 50A (Tc) 5.3 mOhm @ 30A, 10V 2V @ 50µA 25nC @ 5V 3110pF @ 15V 4.5V, 10V ±20V 94W (Tc)
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