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Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 50A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 30V 50A (Tc) 6.3 mOhm @ 50A, 10V 2V @ 40µA 22nC @ 5V 2800pF @ 15V 4.5V, 10V ±20V 83W (Tc)
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Infineon Technologies MOSFET N-CH 25V 50A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 25V 50A (Tc) 5.4 mOhm @ 50A, 10V 2V @ 35µA 22nC @ 5V 2653pF @ 15V 4.5V, 10V ±20V 83W (Tc)
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Infineon Technologies MOSFET N-CH 25V 50A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 25V 50A (Tc) 5.9 mOhm @ 30A, 10V 2V @ 40µA 22nC @ 5V 2653pF @ 15V 4.5V, 10V ±20V 83W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 25V 50A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 25V 50A (Tc) 5.9 mOhm @ 30A, 10V 2V @ 40µA 22nC @ 5V 2653pF @ 15V 4.5V, 10V ±20V 83W (Tc)
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