- Series :
- Part Status :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 550V 7.1A TO-251 | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1500 | N-Channel | - | 550V | 7.1A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | 680pF @ 100V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V TO-251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ E6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO251-3 | 0 | 1500 | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | 63W (Tc) | |||
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150
In-stock
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Infineon Technologies | MOSFET N-CH 650V 4.5A TO-251 | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1 | N-Channel | - | 650V | 4.5A (Tc) | 950 mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | 328pF @ 100V | 10V | ±20V | 37W (Tc) | |||
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431
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4A IPAK-SL | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | Super Junction | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | - | 10V | ±20V | 32W (Tc) | |||
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1,490
In-stock
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Infineon Technologies | MOSFET N-CH 800V 8A TO251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 800V | 8A (Tc) | 600 mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | 570pF @ 500V | 10V | ±20V | 60W (Tc) | |||
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1,490
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4.5A TO251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | 37W (Tc) | |||
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1,485
In-stock
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Infineon Technologies | MOSFET N-CH 800V 3A TO251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 800V | 3A (Tc) | 2 Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | 175pF @ 500V | 10V | ±20V | 24W (Tc) | |||
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15,970
In-stock
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Infineon Technologies | MOSFET N-CH 650V 3.2A TO-251 | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 650V | 3.2A (Tc) | 1.4 Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | 225pF @ 100V | 10V | ±20V | 28W (Tc) |
