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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 650V 58A TO-3PF ISOWATT218FX MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active ISOWATT-218FX 0 1 N-Channel - 650V 58A (Tc) 45 mOhm @ 29A, 10V 5V @ 250µA 143nC @ 10V 6420pF @ 100V 10V ±25V 79W (Tc)
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STMicroelectronics MOSFET N-CH TO-3PF/ISOWATT 218 ISOWATT218FX MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete ISOWATT-218FX 0 1 N-Channel - 650V 46A (Tc) 59 mOhm @ 23A, 10V 5V @ 250µA 139nC @ 10V 6810pF @ 100V 10V ±25V 79W (Tc)
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