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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 9A WDSON-2 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 100V 9A (Ta), 40A (Tc) 13.4 mOhm @ 30A, 10V 3.5V @ 40µA 30nC @ 10V 2300pF @ 50V 6V, 10V ±20V 2.2W (Ta), 43W (Tc)
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Infineon Technologies MOSFET N-CH 80V 13A 2WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 80V 13A (Ta), 50A (Tc) 10.4 mOhm @ 10A, 10V 3.5V @ 40µA 31nC @ 10V 2100pF @ 40V 10V ±20V 2.8W (Ta), 42W (Tc)
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