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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 60A 2WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 30V 15A (Ta), 60A (Tc) 5 mOhm @ 20A, 10V 2.2V @ 250µA 42nC @ 10V 3000pF @ 15V 4.5V, 10V ±20V 2.2W (Ta), 28W (Tc)
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Infineon Technologies MOSFET N-CH 25V 22A 2WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 25V 22A (Ta), 69A (Tc) 3.5 mOhm @ 30A, 10V 2V @ 250µA 25nC @ 10V 1862pF @ 12V 4.5V, 10V ±20V 2.2W (Ta), 28W (Tc)
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Infineon Technologies MOSFET N-CH 25V 24A WDSON-2 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 25V 24A (Ta), 75A (Tc) 3 mOhm @ 30A, 10V 2V @ 250µA 23nC @ 10V 1700pF @ 12V 4.5V, 10V ±20V 2.2W (Ta), 28W (Tc)
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