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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N CH 100V 11A PQFN5X6 8-TQFN Exposed Pad HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 100V 11A (Ta), 58A (Tc) 13.5 mOhm @ 35A, 10V 4V @ 100µA 87nC @ 10V 3240pF @ 25V 10V ±20V 3.6W (Ta), 104W (Tc)
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Infineon Technologies MOSFET N CH 100V 11A PQFN 5X6 8-TQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 100V 11A (Ta), 58A (Tc) 13.5 mOhm @ 35A, 10V 4V @ 100µA 87nC @ 10V 3240pF @ 25V 10V ±20V 3.6W (Ta), 104W (Tc)
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Infineon Technologies MOSFET N CH 30V 21A PQFN5X6 8-TQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PQFN (5x6) 0 4000 N-Channel - 30V 21A (Ta), 83A (Tc) 4.9 mOhm @ 20A, 10V 2V @ 50µA 59nC @ 10V 2600pF @ 10V 4.5V, 10V ±20V 3.4W (Ta), 54W (Tc)
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Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 8-TQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PQFN (5x6) 0 4000 N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V 3.6W (Ta), 96W (Tc)
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