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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 12A DIRECTFET DirectFET™ Isometric MQ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MQ 0 1000 N-Channel - 30V 12A (Ta), 49A (Tc) 11.5 mOhm @ 12A, 7V 2.1V @ 250µA 26nC @ 4.5V 2270pF @ 15V 4.5V, 7V ±12V 2.3W (Ta), 42W (Tc)
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Infineon Technologies MOSFET N-CH 30V 12A DIRECTFET DirectFET™ Isometric MQ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MQ 0 4800 N-Channel - 30V 12A (Ta), 49A (Tc) 11.5 mOhm @ 12A, 7V 2.1V @ 250µA 26nC @ 4.5V 2270pF @ 15V 4.5V, 7V ±12V 2.3W (Ta), 42W (Tc)
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Infineon Technologies MOSFET N-CH 20V 11A DIRECTFET DirectFET™ Isometric MQ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - Obsolete DIRECTFET™ MQ 0 4800 N-Channel - 20V 11A (Ta), 48A (Tc) 13 mOhm @ 11A, 10V 2.3V @ 250µA 18nC @ 4.5V 1420pF @ 10V 4.5V, 10V ±20V 2.3W (Ta), 42W (Tc)
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