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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BSS123WQ-7-F
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RFQ
51,640
In-stock
Diodes Incorporated MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA 20 V SMD/SMT SOT-323-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 170 mA 10 Ohms 800 mV   Enhancement
NX7002AKW,115
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RFQ
3,640
In-stock
Nexperia MOSFET 60 V, single N-chan Trench MOSFET   SMD/SMT SOT-323-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 60 V 170 mA 3 Ohms 1.6 V 0.33 nC Enhancement
SSM3K7002CFU,LF
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RFQ
2,889
In-stock
Toshiba MOSFET Small-Signal MOSFET 20 V SMD/SMT SOT-323-3     Reel 1 Channel Si N-Channel 60 V 170 mA 4.7 Ohms 1.1 V   Enhancement
BSS123W
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RFQ
93,990
In-stock
Fairchild Semiconductor MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR 20 V SMD/SMT SOT-323-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 170 mA 10 Ohms 800 mV   Enhancement
BSS123W-7-F
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RFQ
16,027
In-stock
Diodes Incorporated MOSFET 100V 200mW 20 V SMD/SMT SOT-323-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 170 mA 6 Ohms     Enhancement
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