- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
51,640
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 10 Ohms | 800 mV | Enhancement | ||||
|
GET PRICE |
3,640
In-stock
|
Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | ||||
|
GET PRICE |
2,889
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 4.7 Ohms | 1.1 V | Enhancement | ||||||
|
GET PRICE |
93,990
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 10 Ohms | 800 mV | Enhancement | ||||
|
GET PRICE |
16,027
In-stock
|
Diodes Incorporated | MOSFET 100V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement |