- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,074
In-stock
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Diodes Incorporated | MOSFET 60V UMOS H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V | 1.8 A | 300 mOhms, 425 mOhms | 1 V | 3.2 nC, 5.1 nC | Enhancement | |||
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GET PRICE |
2,716
In-stock
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Diodes Incorporated | MOSFET 30/30V 3.1/2.3A N & P Channel | +/- 20 V, +/- 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V | 3.1 A | 180 mOhms, 330 mOhms | Enhancement | |||||
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GET PRICE |
1,945
In-stock
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Diodes Incorporated | MOSFET 100V 1.4A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V | 1.1 A | 700 mOhms, 1 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement | |||
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950
In-stock
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Diodes Incorporated | MOSFET 60V Dual N-Ch Mosfet 100mOhm 2.8A 210mJ | 5 V, 5 V | SMD/SMT | SM-8 | - 40 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.8 A, 2.8 A | 75 mOhms, 75 mOhms | 700 mV, 700 mV | Enhancement | IntelliFET | |||
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1,076
In-stock
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Diodes Incorporated | MOSFET 60V 1.6A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 60 V | 1.6 A | 300 mOhms | Enhancement | |||||
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885
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 200mohm 1.8A 210mJ | 5 V, 5 V | SMD/SMT | SM-8 | - 40 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 1.8 A, 1.8 A | 150 mOhms, 150 mOhms | 700 mV | Enhancement | IntelliFET | |||
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1,244
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 500mohm 1.2A 210mJ | 5 V | SMD/SMT | SM-8 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 1.2 A | 400 mOhms | 0.7 V to 1.5 V | Enhancement | IntelliFET |
