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Vgs - Gate-Source Voltage :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
CSD13201W10
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RFQ
9,586
In-stock
Texas instruments MOSFET N-CH NexFET Pwr MOSFET 8 V SMD/SMT DSBGA-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 12 V 1.6 A 34 mOhms 800 mV 2.3 nC Enhancement NexFET
CSD23202W10
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RFQ
160,400
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Texas instruments MOSFET 12V P-channel NexFET Pwr MOSFET - 6 V SMD/SMT DSBGA-4 - 55 C + 150 C Reel 1 Channel Si P-Channel - 12 V - 2.2 A 44 mOhms - 900 mV 3.8 nC Enhancement NexFET
CSD25213W10
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RFQ
1,997
In-stock
Texas instruments MOSFET P-CH NexFET Pwr MOSFET - 6 V SMD/SMT DSBGA-4 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 1.6 A 47 mOhms - 850 mV 2.2 nC Enhancement NexFET
CSD23202W10T
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RFQ
1,314
In-stock
Texas instruments MOSFET 12V PCH NexFET - 6 V SMD/SMT DSBGA-4 - 55 C + 150 C Reel 1 Channel Si P-Channel - 12 V - 2.2 A 123 mOhms - 0.6 V 2.9 nC   NexFET
CSD13302WT
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RFQ
500
In-stock
Texas instruments MOSFET 12 V N-ChanNexFET? Power MOSFET 4-DSBGA 10 V SMD/SMT DSBGA-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 12 V 1.6 A 14.6 mOhms 700 mV 7.8 nC Enhancement  
CSD13302W
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RFQ
495
In-stock
Texas instruments MOSFET 12 V N-ChanNexFET? Power MOSFET 4-DSBGA     DSBGA-4     Reel 1 Channel Si N-Channel   1.6 A          
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