- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
20 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
9,600
In-stock
|
Diodes Incorporated | MOSFET P-CH ENHANCEMENT MODE MOSFET | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | ||||
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GET PRICE |
17,176
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 | +/- 25 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 4 nC | Enhancement | |||
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GET PRICE |
2,605
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 mA | 3 Ohms | 1 V | 0.45 nC | Enhancement | |||
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GET PRICE |
3,532
In-stock
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Diodes Incorporated | MOSFET 350mW 30Vdss | 10 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 mA | 1.2 Ohms | Enhancement | |||||
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GET PRICE |
11,192
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 2 V | Enhancement | ||||
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GET PRICE |
10,972
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 12V | 6 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.41 A | 150 mOhms | 350 mV | 1.5 nC | Enhancement | |||
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GET PRICE |
2,634
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 18 mOhms | - 2.1 V | Enhancement | ||||
|
GET PRICE |
5,566
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K | 12 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 750 mA | 550 mOhms | 500 mV | 500 pC | Enhancement | |||
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GET PRICE |
3,166
In-stock
|
Diodes Incorporated | MOSFET 20V 200mA | 10 V | SMD/SMT | X1-DFN1006-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 440 mA | 1.5 Ohms | Enhancement | |||||
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GET PRICE |
4,227
In-stock
|
Diodes Incorporated | MOSFET P-CH ENHANCEMENT 6Ohm -50V -200mA | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | ||||
|
GET PRICE |
8,885
In-stock
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 1.3 nC | Enhancement | |||
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GET PRICE |
4,231
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V | 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 730 mA | 460 mOhms | 1.6 nC | |||||
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GET PRICE |
6,850
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 770 mA | 960 mOhms | - 700 mV | 1.5 nC | Enhancement | |||
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GET PRICE |
10,000
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 20V | 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.35 A | 170 mOhms | 350 mV | 3.1 nC | Enhancement | |||
|
GET PRICE |
10,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K | 12 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 760 mA | 600 mOhms | 400 mV | 930 pC | Enhancement | |||
|
GET PRICE |
3,174
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 1.2 V | - | Enhancement | |||
|
GET PRICE |
9,983
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 410 mA | 1.4 Ohms | 1.3 V | 2.8 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET MOSFET P-CH | SMD/SMT | X1-DFN1006-3 | Reel | Si | P-Channel | - 20 V | - 1.17 A | 960 mOhms | |||||||||||
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GET PRICE |
57,000
In-stock
|
Diodes Incorporated | MOSFET N-Ch Dual MOSFET 25V VDSS 8V VGSS | SMD/SMT | X1-DFN1006-3 | Reel | 2 Channel | Si | N-Channel | 25 V | 1.3 A | 600 mOhms | |||||||||
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GET PRICE |
470,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | SMD/SMT | X1-DFN1006-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1.78 A | 360 mOhms |