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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Packaging Number of Channels Pd - Power Dissipation Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Forward Transconductance - Min Rise Time Fall Time Package Factory Pack Quantity RoHS
BSZ018N04LS6ATMA1
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RFQ
7,650
In-stock
Infineon Technologies MOSFET TRENCH <= 40V - 20 V, + 20 V Tape &amp; Reel (TR) 1 Channel 83 W N-Channel 40 V 40 A 2.1 mOhms 2.3 V 31 nC 110 S 1.6 ns 4 ns TSDSON-FL-8 5000 Green available
BSC0804LSATMA1
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RFQ
4,692
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Infineon Technologies MOSFET TRENCH >=100V - 20 V, + 20 V Tray 1 Channel 83 W   100 V 40 A 10.3 mOhms 1.7 V 12 nC       TDSON-8 5000 Green available
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