- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Packaging | Number of Channels | Pd - Power Dissipation | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Fall Time | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
8,530
In-stock
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Infineon Technologies | MOSFET TRENCH >=100V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 214 W | N-Channel | 200 V | 52 A | 22 mOhms | 2 V | 43 nC | Enhancement | 10 ns | TSON-8 | 5000 | Green available | ||
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GET PRICE |
86,500
In-stock
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Infineon Technologies | MOSFET TRENCH 40<-<100V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 214 W | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 143 nC | 31 ns | TSON-8 | 5000 | Green available |
