- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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327
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 63.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 63.3 A | 43 mOhms | 3.5 V | 270 nC | Enhancement | CoolMOS | |||
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316
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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2,200
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
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3,222
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.3A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.3 A | 1 Ohms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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3,190
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | |||
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11,300
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | |||
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GET PRICE |
8,750
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 650 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | ||
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160
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | |||
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2,278
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.1A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 3.1 A | 1.5 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | |||
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470
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 22.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 22.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 63.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 63.3 A | 43 mOhms | 3.5 V | 270 nC | Enhancement | CoolMOS |
