- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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334
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 350 mOhms | 2 V | 17 nC | Enhancement | ||||
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3,950
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 40 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 545 A | 350 mOhms | 2.2 V | 562 nC | Enhancement | ||||
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7,713
In-stock
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Fairchild Semiconductor | MOSFET NCH DUAL COOL POWERTRENCH MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 1.2 A | 350 mOhms | PowerTrench | ||||||
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272
In-stock
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onsemi | MOSFET GAN 600V 9A 290MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 9 A | 350 mOhms | 1.6 V | 6.2 nC | Enhancement | ||||
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150
In-stock
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IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | 6.5 V | 310 nC | Enhancement | Polar, HiPerFET | |||
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19,793
In-stock
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Fairchild Semiconductor | MOSFET SOT-23 P-CH LOGIC | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 350 mOhms | Enhancement | ||||||
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7,210
In-stock
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Fairchild Semiconductor | MOSFET 100V Single | 25 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.7 A | 350 mOhms | Enhancement | ||||||
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4,883
In-stock
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Fairchild Semiconductor | MOSFET 100V Single | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.7 A | 350 mOhms | Enhancement | QFET | |||||
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4,542
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.8 A | 350 mOhms | Enhancement | ||||||
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4,107
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 N-CH 25V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 950 mA | 350 mOhms | Enhancement | ||||||
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2,462
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch MOSFET 20V VGS -11.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.9 A | 350 mOhms | Enhancement | ||||||
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522
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 32.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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334
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 10A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 350 mOhms | 19 nC | Enhancement | CoolMOS | ||||
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2,098
In-stock
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Diodes Incorporated | MOSFET N-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.5 A | 350 mOhms | 4 V | 5.4 nC | Enhancement | ||||
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20
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 600V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 12 A | 350 mOhms | 3 V | 58 nC | |||||
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GET PRICE |
15,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 350 mOhms | 2.5 V | 22 nC | Enhancement | CoolMOS | ||
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445
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 32.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 350 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
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2,668
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | 12 V | SMD/SMT | U-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 350 mOhms | 450 mV | 500 pC | Enhancement | ||||
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534
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 10A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 350 mOhms | 3 V | 19 nC | Enhancement | CoolMOS | |||
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10
In-stock
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IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | Enhancement | HyperFET | |||||
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31
In-stock
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IXYS | MOSFET 22.0 Amps 600 V 0.33 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | Enhancement | ||||||
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4
In-stock
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IXYS | MOSFET -32 Amps -600V 0.350 Rds | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 2 V to - 4 V | 196 nC | |||||||
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110
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 11 A | 350 mOhms | 4 V | 120 nC | Enhancement | ||||
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10
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 25 A | 350 mOhms | 3 V | 186 nC | Enhancement | |||||
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1,437
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 9A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 350 mOhms | 2.5 V | 22 nC | Enhancement | CoolMOS | |||
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11,985
In-stock
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onsemi | MOSFET NFET 25V/8V 75mA 350 | 8 V | SMD/SMT | SC-70-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 750 mA | 350 mOhms | Enhancement | ||||||
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900
In-stock
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IXYS | MOSFET -32 Amps -600V 0.350 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 4 V | 196 nC | Enhancement | PolarP | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 1.0V Max 0.4W Pd | 12 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 350 mOhms | 450 mV | 500 pC | Enhancement | ||||
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180
In-stock
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IXYS | MOSFET 600V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | 5.5 V | 58 nC | Enhancement | PolarHV, HiPerFET | |||
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90
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 10A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 350 mOhms | Enhancement | CoolMOS |
