- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,770
In-stock
|
Fairchild Semiconductor | MOSFET N-Chan UniFET2 500V | 25 V | Through Hole | TO-220-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.38 Ohms | 5 V | 9 nC | UniFET | ||||
|
|
3,578
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 190 mOhms | - 1 V | 9 nC | Enhancement | ||||
|
|
8,740
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, 30 V | 3.4 A, 2.8 A | 100 mOhms, 140 mOhms | 9 nC | Enhancement | |||||
|
|
996
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.2 A | 1.57 Ohms | 3 V to 5 V | 9 nC | UniFET | ||||
|
|
842
In-stock
|
Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.38 Ohms | 5 V | 9 nC | UniFET | ||||
|
|
4,916
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | ||||
|
|
5,327
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | ||||
|
|
374
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 12.6 mOhms | 9 nC | Enhancement | OptiMOS | ||||
|
|
2,115
In-stock
|
Diodes Incorporated | MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.7 A | 125 mOhms | - 1 V | 9 nC | |||||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 40 A | 10 mOhms | 9 nC | Enhancement | OptiMOS | ||||
|
|
83,800
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh | ||||
|
|
470
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6 A | 0.49 Ohms | 3 V | 9 nC | Enhancement | CoolMOS | ||||
|
|
500
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6 A | 0.49 Ohms | 3 V | 9 nC | Enhancement | CoolMOS | ||||
|
|
126
In-stock
|
onsemi | MOSFET TRENCH 3.1 30V 9 mOhm NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.7 A | 19 mOhms | 1.8 V | 9 nC | |||||
|
|
208
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 71A 6.1MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.8 mOhms | 1.2 V | 9 nC | Enhancement | ||||
|
|
101
In-stock
|
IXYS | MOSFET Polar Power Mosfet 800V 1A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 10 Ohms | 4 V | 9 nC | |||||
|
|
3,562
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.6 mOhms | 1.6 V | 9 nC | Enhancement | NexFET | |||
|
|
2,636
In-stock
|
Texas instruments | MOSFET 30V N-Channel MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 8.1 mOhms | 1.5 V | 9 nC | NexFET | ||||
|
|
2,561
In-stock
|
Texas instruments | MOSFET 30-V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 7.5 mOhms | 1.5 V | 9 nC | NexFET | ||||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 21 A | 165 mOhms | 9 nC | Enhancement | CoolMOS | ||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh | |||||
|
|
3,001
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.9 A | 1.7 Ohms | 3 V to 5 V | 9 nC | UniFET FRFET | ||||
|
|
GET PRICE |
86,200
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh |
