- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,513
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | 8 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 54 mOhms | - 0.3 V to - 1 V | 23.1 nC | |||||
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2,900
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 66 mOhms | 350 mV | 16.8 nC | Enhancement | ||||
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2,803
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 12 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 23.8 mOhms | 500 mV | 9.4 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2.5A 6Pin | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 49 mOhms | Enhancement |