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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.169
VIEW
RFQ
Texas instruments MOSFET N-CH 20V 22A 6-SON 6-WDFN Exposed Pad NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-SON (2x2) 0 3000 N-Channel - 20V 22A (Ta) 15 mOhm @ 5A, 10V 1.9V @ 250µA 6.7nC @ 10V 419pF @ 10V 4.5V, 10V ±20V 2.5W (Ta)
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Per Unit
$0.206
RFQ
93,000
In-stock
Texas instruments MOSFET N-CH 12V 76A 6SON 6-VDFN Exposed Pad NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-WSON (2x2) 0 3000 N-Channel - 12V 22A (Ta) 9.3 mOhm @ 5A, 4.5V 1.1V @ 250µA 6.6nC @ 4.5V 997pF @ 6V 2.5V, 4.5V ±8V 2.7W (Ta)
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