Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$0.191
RFQ
87,000
In-stock
Diodes Incorporated MOSFET N-CH 30V 1.8A SOT23-3 TO-236-3, SC-59, SOT-23-3 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3 0 0 3000 N-Channel   - 30V 1.8A (Ta) 120 mOhm @ 2.5A, 10V 1V @ 250µA 3.9nC @ 10V 190pF @ 25V 4.5V, 10V ±20V 625mW (Ta)
Default Photo
Per Unit
$0.498
VIEW
RFQ
Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8DFN 8-WDFN Exposed Pad - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (3x2) 3000 0 3000 N and P-Channel 1.7W Logic Level Gate 30V 2.9A, 2.1A 120 mOhm @ 2.5A, 10V 3V @ 250µA 3.9nC @ 10V 190pF @ 25V      
Default Photo
VIEW
RFQ
Diodes Incorporated MOSFET 2N-CH 30V 2.9A 8MLP 8-VDFN Exposed Pad - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-MLP (3x2) 0 0 3000 2 N-Channel (Dual) 1.13W Logic Level Gate 30V 2.9A 120 mOhm @ 2.5A, 10V 1V @ 250µA (Min) 3.9nC @ 10V 190pF @ 25V      
Default Photo
Per Unit
$0.367
RFQ
3,000
In-stock
Diodes Incorporated MOSFET 2N-CH 30V 2.9A DFN 8-WDFN Exposed Pad - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (3x2) 6000 0 3000 2 N-Channel (Dual) 1.7W Logic Level Gate 30V 2.9A 120 mOhm @ 2.5A, 10V 3V @ 250µA 3.9nC @ 10V 190pF @ 25V      
Page 1 / 1