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- Current - Continuous Drain (Id) @ 25°C :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 9.4A (Ta) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 48W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | 4-PowerTSFN | CoolMOS™ P7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-VSON-4 | 0 | 3000 | N-Channel | - | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 81W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 3000 | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 48W (Tc) | ||||
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VIEW | onsemi | MOSFET 2N-CH 50V 3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 3000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 25nC @ 10V | - |
