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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.544
VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 30A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active IPAK (TO-251) 0 3000 N-Channel 55V 30A (Tc) 14 mOhm @ 30A, 10V 3V @ 250µA 92nC @ 10V 1870pF @ 25V 5V, 10V ±16V 120W (Tc)
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Per Unit
$0.752
RFQ
9,000
In-stock
onsemi MOSFET P-CH 60V 55A ATPAK ATPAK (2 leads+tab) - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active ATPAK 0 3000 P-Channel 60V 55A (Ta) 16 mOhm @ 28A, 10V - 92nC @ 10V 4000pF @ 20V 4V, 10V ±20V 60W (Tc)
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