- Series :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 161A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 30V | 161A (Tc) | 3.3 mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | 4380pF @ 15V | 4.5V, 10V | ±20V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 75V 87A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 75V | 87A (Tc) | 7.2 mOhm @ 52A, 10V | 3.7V @ 100µA | 126nC @ 10V | 4430pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 60V 90A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 100V 56A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | 143W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 30A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V | 120W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 75V 56A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 75V | 56A (Tc) | 11.2 mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | 3107pF @ 25V | 6V, 10V | ±20V | 99W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 60V 56A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 60V | 56A (Tc) | 7.9 mOhm @ 43A, 10V | 3.7V @ 100µA | 87nC @ 10V | 3020pF @ 25V | 6V, 10V | ±20V | 99W (Tc) |
