Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 55V 9.5A TO-220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole - Obsolete TO-220AB Full-Pak 0 50 P-Channel - 55V 9.5A (Tc) 175 mOhm @ 5.4A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V 29W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 60V 14A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 50 N-Channel - 60V 14A (Tc) 71 mOhm @ 7.8A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V 29W (Tc)
Page 1 / 1