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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 105A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 30V 105A (Tc) 6 mOhm @ 21A, 10V 2.25V @ 250µA 35nC @ 4.5V 2840pF @ 15V 4.5V, 10V ±20V 110W (Tc)
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Infineon Technologies MOSFET N-CH 20V 85A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 20V 85A (Tc) 8 mOhm @ 51A, 7V 700mV @ 250µA 78nC @ 4.5V 3300pF @ 15V 4.5V, 7V ±10V 110W (Tc)
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