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- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 75V 170A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 75V | 170A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | 10V | ±20V | 300W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 170A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 1 | N-Channel | - | 40V | 170A (Tc) | 3.6 mOhm @ 130A, 10V | 4V @ 250µA | 200nC @ 10V | 5890pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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1,418
In-stock
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Infineon Technologies | MOSFET N-CH 75V 180A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 75V | 170A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | 10V | ±20V | 330W (Tc) | |||
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5,325
In-stock
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Infineon Technologies | MOSFET N-CH 100V 170A SUPER247 | TO-274AA | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | SUPER-247 (TO-274AA) | 0 | 1 | N-Channel | - | 100V | 170A (Tc) | 9 mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | 6790pF @ 25V | 10V | ±30V | 580W (Tc) |
