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- Rds On (Max) @ Id, Vgs :
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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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791
In-stock
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STMicroelectronics | MOSFET N-CH 800V 10.5A TO-220 | TO-220-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 800V | 10.5A (Tc) | 750 mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87nC @ 10V | 2620pF @ 25V | 10V | ±30V | 190W (Tc) | ||||
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GET PRICE |
15,000
In-stock
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Infineon Technologies | MOSFET N-CH 700V 10.5A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 700V | 10.5A (Tc) | 600 mOhm @ 1A, 10V | 3.5V @ 210µA | 22nC @ 10V | 474pF @ 100V | 10V | ±20V | 86W (Tc) | |||
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2,028
In-stock
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STMicroelectronics | MOSFET N-CH 800V 10.5A TO-247 | TO-247-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 800V | 10.5A (Tc) | 750 mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87nC @ 10V | 2620pF @ 25V | 10V | ±30V | 190W (Tc) |