- Packaging :
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- Current - Continuous Drain (Id) @ 25°C :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 6.5A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(SOT23-6) | 0 | 1 | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.6A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(SOT23-6) | 0 | 1 | P-Channel | - | 20V | 5.6A (Ta) | 50 mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 16nC @ 5V | 1079pF @ 10V | 2.5V, 4.5V | ±12V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 3.7A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro3™/SOT-23 | 0 | 1 | P-Channel | - | 20V | 3.7A (Ta) | 65 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 633pF @ 10V | 2.5V, 4.5V | ±12V | 1.3W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Micro3™/SOT-23 | 0 | 1 | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.7V, 4.5V | ±12V | 1.25W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 8.2A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | P-Channel | - | 20V | 8.2A (Ta) | 20 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | 2520pF @ 10V | 2.5V, 4.5V | ±12V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 3.9A 8TSSOP | 8-TSSOP (0.173", 4.40mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-TSSOP | 0 | 1 | 2 P-Channel (Dual) | 1W | Logic Level Gate | 20V | 3.9A | 51 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 7A | 30 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1340pF @ 16V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 4.3A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | 2 P-Channel (Dual) | 1.25W | Logic Level Gate | 20V | 4.3A | 55 mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | 1066pF @ 10V |
