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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.1A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 150V | 5.1A (Ta) | 43 mOhm @ 3.1A, 10V | 5V @ 100µA | 38nC @ 10V | 1647pF @ 75V | 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 24A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | |||||
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48
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | |||||
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157
In-stock
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Infineon Technologies | MOSFET N-CH 200V 25A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 200V | 25A (Tc) | 72.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | ||||
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143
In-stock
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Texas instruments | MOSFET N-CH 100V 100A TO220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 100V | 100A (Ta) | 7.7 mOhm @ 60A, 10V | 3.3V @ 250µA | 38nC @ 10V | 3870pF @ 50V | 6V, 10V | ±20V | 214W (Tc) | ||||
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224
In-stock
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Infineon Technologies | MOSFET N-CH 60V 20A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 60V | 20A (Ta), 80A (Tc) | 4 mOhm @ 80A, 10V | 2.8V @ 50µA | 38nC @ 10V | 2700pF @ 30V | 6V, 10V | ±20V | 3W (Ta), 107W (Tc) | ||||
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875
In-stock
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Infineon Technologies | MOSFET N-CH 30V 70A TO-220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 30V | 70A (Tc) | 4.2 mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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277
In-stock
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STMicroelectronics | MOSFET N-CH 850V 19A TO-247 | TO-247-3 | SuperMESH5™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 850V | 19A (Tc) | 275 mOhm @ 9.5A, 10V | 5V @ 100µA | 38nC @ 10V | 1650pF @ 100V | 10V | ±30V | 250W (Tc) | ||||
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5,875
In-stock
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Infineon Technologies | MOSFET N-CH 200V 13A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 9.2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | ||||||||
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3,451
In-stock
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Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V |
