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12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 16A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | 79W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 14.5 mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | 1380pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 600V TO220-3 | TO-220-3 | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 600V | 23.8A (Tc) | 160 mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | 2080pF @ 100V | 10V | ±20V | 176W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 1700V 2.6A TO247-3 | TO-247-3 | PowerMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 1700V | 2.6A (Tc) | 13 Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | 1100pF @ 100V | 10V | ±30V | 160mW | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 1700V 2.6A | ISOWATT218FX | PowerMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | ISOWATT-218FX | 0 | 1 | N-Channel | - | 1700V | 2.6A (Tc) | 13 Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | 1100pF @ 100V | 10V | ±30V | 63W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 600V TO220FP-3 | TO-220-3 Full Pack | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-FP | 0 | 1 | N-Channel | - | 600V | 23.8A (Tc) | 160 mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | 2080pF @ 100V | 10V | ±20V | 34W (Tc) | ||||
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145
In-stock
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Infineon Technologies | MOSFET N-CH 100V 16A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | 79W (Tc) | ||||
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1,500
In-stock
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STMicroelectronics | MOSFET N-CH 650V 15A I2PAK-FP | TO-262-3 Full Pack, I²Pak | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | I2PAKFP (TO-281) | 0 | 1 | N-Channel | - | 650V | 15A (Tc) | 270 mOhm @ 7.5A, 10V | 4V @ 250µA | 44nC @ 10V | 1280pF @ 50V | 10V | ±25V | 30W (Tc) | ||||
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295
In-stock
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Infineon Technologies | MOSFET N-CH 600V TO247-3 | TO-247-3 | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 600V | 23.8A (Tc) | 160 mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | 2080pF @ 100V | 10V | ±20V | 176W (Tc) | ||||
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2,884
In-stock
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Infineon Technologies | MOSFET N-CH 100V 12A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 100V | 12A (Tc) | 110 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | 41W (Tc) | ||||
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76,200
In-stock
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Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V |
