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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 5.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | N-Channel | - | 20V | 5.7A (Ta) | 35 mOhm @ 3.8A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 650pF @ 15V | 2.7V, 4.5V | ±12V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 4.3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | |||||||
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28,796
In-stock
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Infineon Technologies | MOSFET 2P-CH 20V 4.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | |||||||
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1,831
In-stock
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Infineon Technologies | MOSFET 2P-CH 20V 4.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V |
