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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 30V 15A PQFN56 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) Single Die 0 1 N-Channel - 30V 15A (Ta), 33A (Tc) 8.7 mOhm @ 15A, 10V 2.35V @ 25µA 13nC @ 4.5V 1095pF @ 15V 4.5V, 10V ±20V 3.1W (Ta)
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Per Unit
$1.000
RFQ
3,006
In-stock
Infineon Technologies MOSFET N-CH 30V 62A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 62A (Tc) 8.7 mOhm @ 31A, 10V 2.35V @ 25µA 13nC @ 4.5V 1077pF @ 15V 4.5V, 10V ±20V 65W (Tc)
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