- Manufacture :
- Package / Case :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 700V 31.2A TO220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 700V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | 277.8W (Tc) | |||
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478
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-220-3 | TO-220-3 | Automotive, AEC-Q101, CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | 277.8W (Tc) | |||
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395
In-stock
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STMicroelectronics | MOSFET N-CH 600V 68A TO247 | TO-247-3 | MDmesh™ II Plus | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 600V | 68A (Tc) | 40 mOhm @ 34A, 10V | 4V @ 250µA | 118nC @ 10V | 5200pF @ 100V | 10V | ±25V | 450W (Tc) |
