- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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586
In-stock
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Infineon Technologies | MOSFET N CH 100V 35A TO220 | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 100V | 35A (Tc) | 13.5 mOhm @ 21A, 10V | 4V @ 100µA | 81nC @ 10V | 2998pF @ 50V | 10V | ±20V | 42W (Tc) | |||
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232
In-stock
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Texas instruments | MOSFET N-CH 60V 200A TO-220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 60V | 200A (Ta) | 2 mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | 6620pF @ 30V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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4,699
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | 130W (Tc) |
