- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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44
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | 3.8W (Ta), 300W (Tc) | ||||
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56
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Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | 130W (Tc) | ||||
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745
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Infineon Technologies | MOSFET N-CH 55V 81A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 55V | 81A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 130nC @ 10V | 2900pF @ 25V | 10V | ±20V | 170W (Tc) | |||
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1,359
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | 160W (Tc) | |||
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3,790
In-stock
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Infineon Technologies | MOSFET N-CH 55V 49A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 55V | 49A (Tc) | 12 mOhm @ 26A, 10V | 4V @ 250µA | 130nC @ 10V | 2900pF @ 25V | 10V | ±20V | 58W (Tc) | |||
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GET PRICE |
19,700
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | 3.8W (Ta), 300W (Tc) | ||
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2,589
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | 170W (Tc) |
