- Manufacture :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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- Input Capacitance (Ciss) (Max) @ Vds :
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16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 6V, 10V | ±20V | 230W (Tc) | ||||
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12
In-stock
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Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 75V | 120A (Tc) | 5.8 mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | 10V | ±20V | 230W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 900V 11A TO-247 | TO-247-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 900V | 11A (Tc) | 880 mOhm @ 5.5A, 10V | 4.5V @ 100µA | 152nC @ 10V | 3500pF @ 25V | 10V | ±30V | 230W (Tc) | |||
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970
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 60V | 120A (Tc) | 4.2 mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | 10V | ±20V | 230W (Tc) | ||||
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320
In-stock
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Infineon Technologies | MOSFET N CH 40V 195A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 6V, 10V | ±20V | 230W (Tc) | |||
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612
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 120A (Tc) | 4.2 mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | 10V | ±20V | 230W (Tc) | |||
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54,500
In-stock
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Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 55V | 75A (Tc) | 4.9 mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | 10V | ±20V | 230W (Tc) | |||
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837
In-stock
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Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 260A (Tc) | 1.95 mOhm @ 60A, 10V | 2.35V @ 150µA | 86nC @ 4.5V | 8420pF @ 15V | 4.5V, 10V | ±20V | 230W (Tc) | |||
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16,760
In-stock
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Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | 230W (Tc) | ||||
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1,600
In-stock
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Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 10V | ±20V | 230W (Tc) | |||
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1,235
In-stock
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Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1 | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | 230W (Tc) | |||
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1,010
In-stock
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Infineon Technologies | MOSFET N-CH 40V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 75A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | 230W (Tc) | |||
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1,519
In-stock
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Infineon Technologies | MOSFET N-CH 75V 120A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 75V | 120A (Tc) | 5.8 mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | 10V | ±20V | 230W (Tc) | |||
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506
In-stock
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STMicroelectronics | MOSFET N-CH 950V 10A TO-247 | TO-247-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 950V | 10A (Tc) | 900 mOhm @ 5A, 10V | 4.5V @ 100µA | 113nC @ 10V | 3500pF @ 25V | 10V | ±30V | 230W (Tc) | |||
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9,050
In-stock
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Infineon Technologies | MOSFET N CH 60V 172A TO247 | TO-247-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 60V | 172A (Tc) | 3.3 mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | 6V, 10V | ±20V | 230W (Tc) | |||
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968
In-stock
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STMicroelectronics | MOSFET N-CH 1KV 8.3A TO-247 | TO-247-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 1000V | 8.3A (Tc) | 1.38 Ohm @ 4.15A, 10V | 4.5V @ 100µA | 162nC @ 10V | 3500pF @ 25V | 10V | ±30V | 230W (Tc) |
