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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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4,094
In-stock
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Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 1 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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284
In-stock
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STMicroelectronics | MOSFET N-CH 650V 35A TO-3PF | ISOWATT218FX | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | ISOWATT-218FX | 0 | 1 | N-Channel | - | 650V | 35A (Tc) | 78 mOhm @ 17.5A, 10V | 5V @ 250µA | 82nC @ 10V | 3470pF @ 100V | 10V | ±25V | 57W (Tc) | |||
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300
In-stock
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STMicroelectronics | MOSFET N-CH 650V 30A TO-3PF | ISOWATT218FX | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | ISOWATT-218FX | 0 | 1 | N-Channel | - | 650V | 30A (Tc) | 95 mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | 3000pF @ 100V | 10V | ±25V | 57W (Tc) | |||
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6,336
In-stock
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Infineon Technologies | MOSFET P-CH 55V 18A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) |
