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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 200V 24A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | ||||
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48
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Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | ||||
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157
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Infineon Technologies | MOSFET N-CH 200V 25A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 200V | 25A (Tc) | 72.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | |||
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30
In-stock
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Infineon Technologies | MOSFET N-CH 150V 35A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 150V | 35A (Tc) | 39 mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | 1750pF @ 50V | 10V | ±20V | 144W (Tc) | |||
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GET PRICE |
14,360
In-stock
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Toshiba | MOSFET N-CH 600V 12A TO-3PN | TO-3P-3, SC-65-3 | DTMOSII | Bulk | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-3P(N) | 0 | 1 | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | 144W (Tc) | ||
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2,330
In-stock
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Infineon Technologies | MOSFET N-CH 150V 33A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 150V | 33A (Tc) | 42 mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | 1750pF @ 50V | 10V | ±20V | 144W (Tc) |
