- Manufacture :
- Package / Case :
- Series :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,293
In-stock
|
Texas instruments | MOSFET N-CH 60V 200A TO220-3 | TO-220-3 | NexFET™ | Tray | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 60V | 200A (Ta) | 44 mOhm @ 100A, 10V | 2.2V @ 250µA | 57nC @ 10V | 5070pF @ 30V | 4.5V, 10V | ±20V | 200W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2 N-CH 1200V 100A MODULE | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A | 11 mOhm @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | 7950pF @ 800V | |||||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2 N-CH 1200V 50A MODULE | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23 mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | |||||||
|
|
|
24
In-stock
|
Infineon Technologies | MOSFET MODULE 1200V 50A | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23 mOhm @ 50A, 15V | 5.5V @ 20mA | 125nC @ 5V | 3950pF @ 800V | |||||||
|
|
|
5
In-stock
|
Infineon Technologies | MOSFET MODULE 1200V 25A | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A | 45 mOhm @ 25A, 15V | 5.5V @ 10mA | 620nC @ 15V | 2000pF @ 800V | |||||||
|
|
|
103
In-stock
|
onsemi | MOSFET 5N-CH 650V 36A F1 MODULE | F1 Module | - | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | F1 | 0 | 1 | 5 N-Channel (Solar Inverter) | 250W | Standard | 650V | 36A | 90 mOhm @ 27A, 10V | 3.8V @ 250µA | - | - |
