- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4085 | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 1.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro3™/SOT-23 | 0 | 1 | N-Channel | - | 30V | 1.2A (Ta) | 250 mOhm @ 910mA, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | 4.5V, 10V | ±20V | 540mW (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro3™/SOT-23 | 0 | 1 | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | 540mW (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | TO-261-4, TO-261AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 4000 | N-Channel | - | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
|
|
|
4,000
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.2A SOT-223 | TO-261-4, TO-261AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | N-Channel | - | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
|
|
|
39,000
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | 1.25W (Ta) |
