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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 2.6A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 2000 | N-Channel | - | 60V | 2.6A (Ta) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 2.6A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | - | 60V | 2.6A (Ta) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 2.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 2560 | N-Channel | - | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 10V | ±30V | 2.8W (Ta) | |||
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1,476
In-stock
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Infineon Technologies | MOSFET N-CH 150V 2.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 10V | ±30V | 2.8W (Ta) | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 2.6A TSOT26 | SOT-23-6 Thin, TSOT-23-6 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TSOT-26 | 36000 | 3000 | N-Channel | - | 100V | 2.6A (Ta) | 160 mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | 1167pF @ 25V | 4.5V, 10V | ±20V | 1.2W (Ta) | |||
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27,000
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 2.6A SOT-323 | SC-70, SOT-323 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-323 | 0 | 3000 | N-Channel | - | 30V | 2.6A (Ta) | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 4.6nC @ 4.5V | 447pF @ 10V | 2.5V, 4.5V | ±12V | 500mW (Ta) | |||
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20,000
In-stock
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onsemi | MOSFET N-CH 59V 2.6A SOT-223-4 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 2725000 | 1000 | N-Channel | - | 59V | 2.6A (Ta) | 110 mOhm @ 2.6A, 10V | 1.9V @ 100µA | 4.5nC @ 4.5V | 155pF @ 35V | 3.5V, 10V | ±15V | 1.69W (Ta) | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CH 150V 2.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 10V | ±30V | 2.8W (Ta) |
