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Part Status :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 80V 6.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - 8-SO 0 0 N-Channel 80V 6.3A (Ta) 29 mOhm @ 3.8A, 10V 4V @ 250µA 57nC @ 10V 1680pF @ 25V 10V ±20V 2.5W (Ta)
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Per Unit
$0.591
RFQ
8,000
In-stock
Infineon Technologies MOSFET N-CH 80V 6.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 N-Channel 80V 6.3A (Ta) 29 mOhm @ 3.8A, 10V 4V @ 250µA 57nC @ 10V 1680pF @ 25V 10V ±20V 2.5W (Ta)
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Per Unit
$0.296
RFQ
40,000
In-stock
onsemi MOSFET N-CH 30V 6.3A SOT-223 TO-261-4, TO-261AA - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223-4 0 4000 N-Channel 30V 6.3A (Ta) 45 mOhm @ 6.3A, 4.5V 1V @ 250µA 15nC @ 4.5V 500pF @ 15V 2.5V, 4.5V ±8V 3W (Ta)
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