- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 600V 52A TO247-4 | TO-247-4 | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247-4L | 0 | 1 | N-Channel | - | 600V | 52A (Tc) | 55 mOhm @ 26A, 10V | 4V @ 250µA | 91nC @ 10V | 3750pF @ 100V | 10V | ±25V | 350W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 52A TO247 | TO-247-3 | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 600V | 52A (Tc) | 55 mOhm @ 26A, 10V | 4V @ 250µA | 91nC @ 10V | 3750pF @ 100V | 10V | ±25V | 350W (Tc) | |||
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Infineon Technologies | MOSFET N-CH 55V 52A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 55V | 52A (Tc) | 10 mOhm @ 28A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 58W (Tc) |
