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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 0 1000 N-Channel 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) PG-SOT223-4 0 0 1000 N-Channel 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA 400pF @ 25V 10V ±20V 1.8W (Ta)
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Per Unit
$0.667
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RFQ
Infineon Technologies MOSFET N-CH 500V 0.4A SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 0 1000 N-Channel 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA 400pF @ 25V 10V ±20V 1.8W (Ta)
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Per Unit
$0.540
RFQ
12,003
In-stock
onsemi MOSFET N-CH 60V 400MA TO-92 TO-226-3, TO-92-3 (TO-226AA) - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-92-3 10000 0 1 N-Channel 60V 400mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA 50pF @ 25V 4.5V, 10V ±20V 625mW (Ta)
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