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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$3.530
RFQ
478
In-stock
STMicroelectronics MOSFET N-CH 800V 6.2A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 0 1 N-Channel - 800V 6.2A (Tc) 1.5 Ohm @ 3.1A, 10V 4.5V @ 100µA 46nC @ 10V 1320pF @ 25V 10V ±30V 140W (Tc)
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Per Unit
$3.400
RFQ
936
In-stock
STMicroelectronics MOSFET N-CH 800V 6.2A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 0 1 N-Channel - 800V 6.2A (Tc) 1.5 Ohm @ 3.1A, 10V 4.5V @ 100µA 46nC @ 10V 1320pF @ 25V 10V ±30V 140W (Tc)
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Per Unit
$0.446
RFQ
2,500
In-stock
onsemi MOSFET N-CH 250V 6.2A DPAK-3 TO-252-3, DPak (2 Leads + Tab), SC-63 UniFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-PAK 25000 0 2500 N-Channel - 250V 6.2A (Tc) 550 mOhm @ 3.1A, 10V 2V @ 250µA 16nC @ 10V 635pF @ 25V 5V, 10V ±20V 56W (Tc)
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