- Manufacture :
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- Operating Temperature :
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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 350 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 450 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 200 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | |||
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VIEW | Texas instruments | 40V N-CHANNEL NEXFET POWER MOSF | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSONP (5x6) | 0 | 250 | N-Channel | - | 40V | 89A (Tc) | 7.9 mOhm @ 15A, 10V | 2.4V @ 250µA | 40nC @ 10V | 2683pF @ 20V | 4.5V, 10V | ±20V | 74W (Tc) | |||
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VIEW | Texas instruments | 40V N CH MOSFET | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSONP (5x6) | 0 | 2500 | N-Channel | - | 40V | 89A (Tc) | 7.9 mOhm @ 15A, 10V | 2.4V @ 250µA | 40nC @ 20V | - | 4.5V, 10V | ±20V | 74W (Tc) | |||
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992
In-stock
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Infineon Technologies | MOSFET N-CH 55V 89A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 170W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 89A | DirectFET™ Isometric ME | StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DirectFET™ Isometric ME | 0 | 4800 | N-Channel | - | 75V | 89A (Tc) | 5.7 mOhm @ 53A, 10V | 3.7V @ 150µA | 186nC @ 10V | 6504pF @ 25V | 6V, 10V | ±20V | 96W (Tc) | |||
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722
In-stock
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Infineon Technologies | MOSFET N-CH 80V 89A TO220-3 | TO-220-3 Full Pack | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-FP | 0 | 1 | N-Channel | - | 80V | 89A (Tc) | 2.8 mOhm @ 89A, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | 6V, 10V | ±20V | 42W (Tc) | |||
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2,400
In-stock
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Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) |
