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- Current - Continuous Drain (Id) @ 25°C :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | 2.7W (Ta), 37W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | 8-VQFN Exposed Pad | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (3x3) | 0 | 4000 | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | 2.7W (Ta), 37W (Tc) |
