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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$6.080
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RFQ
STMicroelectronics MOSFET N-CH 900V 11A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 900V 11A (Tc) 880 mOhm @ 5.5A, 10V 4.5V @ 100µA 152nC @ 10V 3500pF @ 25V 10V ±30V 230W (Tc)
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Per Unit
$0.889
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RFQ
Infineon Technologies MOSFET N-CH 40V 100A PQFN5X6 8-PowerVDFN HEXFET®, StrongIRFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 40V 100A (Tc) 1.7 mOhm @ 100A, 10V 3.7V @ 150µA 152nC @ 10V 5406pF @ 25V 6V, 10V ±20V 125W (Tc)
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